Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport

نویسندگان

  • Shaoxin Feng
  • Christoph H. Grein
  • Michael E. Flatté
چکیده

A nonequilibrium Green’s function method is applied to model high-field quantum transport and electronphonon resonances in semiconductor superlattices. The field-dependent density of states for elastic ~impurity! scattering is found nonperturbatively in an approach which can be applied to both high and low electric fields. I-V curves, and specifically electron-phonon resonances, are calculated by treating the inelastic ~LO phonon! scattering perturbatively. Calculations show how strong impurity scattering suppresses the electron-phonon resonance peaks in I-V curves, and their detailed sensitivity to the size, strength and concentration of impurities.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electron transport in quantum wire superlattices

Electronic transport is theoretically investigated in laterally confined semiconductor superlattices using the formalism of nonequilibrium Green’s functions. Velocity-field characteristics are calculated for nanowire superlattices of varying diameters, from the quantum dot superlattice regime to the quantum well superlattice regime. Scattering processes due to electron-phonon couplings, phonon ...

متن کامل

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/ GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, ...

متن کامل

Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons and from acoustic phonons are as important as line-edge roughness scattering. The relative importance of these scattering mechanisms varies with ...

متن کامل

The electrical transport properties in ZnO bulk, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO heterostructures

p { margin-bottom: 0.1in; direction: rtl; line-height: 120%; text-align: right; }a:link { color: rgb(0, 0, 255); } In this paper, the reported experimental data related to electrical transport properties in bulk ZnO, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitavely and the most important scattering parameters on controlling electron concentratio...

متن کامل

Electron Mobility in InP at Low Electric Field Application

Temperature and doping dependencies of electron mobility in InP semiconductor has been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low tempera...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2003